发明名称 Device and process of forming device with device structure formed in trench and graphene layer formed thereover
摘要 A graphene-based device is formed with a substrate having a trench therein, a device structure on the substrate and within the trench, a graphene layer over the device structure, and a protective layer over the graphene layer. Fabrication techniques include forming a trench in a substrate, forming a device structure within the trench, forming a graphene layer over the device structure, and forming a protective layer over the graphene layer.
申请公布号 US7858989(B2) 申请公布日期 2010.12.28
申请号 US20080201801 申请日期 2008.08.29
申请人 GLOBALFOUNDRIES INC. 发明人 CHEN AN;KRIVOKAPIC ZORAN
分类号 H01L29/15 主分类号 H01L29/15
代理机构 代理人
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