发明名称 LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE
摘要 <p>A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.</p>
申请公布号 KR20100135894(A) 申请公布日期 2010.12.27
申请号 KR20107025094 申请日期 2009.04.06
申请人 APPLIED MATERIALS, INC. 发明人 CARDUCCI JAMES D.;NGUYEN ANDREW;BALAKRISHNA AJIT;KUTNEY MICHAEL C.
分类号 H05H1/34;H01L21/3065 主分类号 H05H1/34
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