| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing sequence for a semiconductor wafer and a novel processing step that suppress disadvantages of fine grinding used so far and disadvantages of conventional rough grinding steps (PPG, DDG) and lapping, and are suitable to silicon wafers of 450 mm diameter simultaneously.SOLUTION: This invention relates to a method for processing both sides of a semiconductor wafer simultaneously. The semiconductor wafer is placed and held in freely movable fashion in a cutout in one of a plurality of carriers that are caused to rotate by means of a rotating apparatus, and thereby being moved on a cycloidal trajectory, and the semiconductor wafer is processed in material-removing fashion between two rotating ring-shaped working disks, wherein each working disk includes a working layer having abrasive material, wherein an alkaline medium having no abrasive material is supplied during the processing. |
