发明名称 |
Non-plasma capping layer for interconnect applications |
摘要 |
The present invention provides an interconnect structure which has a high leakage resistance and substantially no metallic residues and no physical damage present at an interface between the interconnect dielectric and an overlying dielectric capping layer. The interconnect structure of the invention also has an interface between each conductive feature and the overlying dielectric capping layer that is substantially defect-free. The interconnect structure of the invention includes a non-plasma deposited dielectric capping layer which is formed utilizing a process including a thermal and chemical-only pretreatment step that removes surface oxide from atop each of the conductive features as well as metallic residues from atop the interconnect dielectric material. Following this pretreatment step, the dielectric capping layer is deposited.
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申请公布号 |
US7871935(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20080108119 |
申请日期 |
2008.04.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;MURRAY CONAL E. |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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