发明名称 Non-volatile memory with error detection
摘要 Data move operations in a memory device are described that enable identification of data errors. Error detection circuitry in the memory device can be operated using parity data or ECC data stored in the memory. Results of the error detection can be accessed by a memory controller for data repair operations by the controller.
申请公布号 US7877669(B2) 申请公布日期 2011.01.25
申请号 US20090425867 申请日期 2009.04.17
申请人 MICRON TECHNOLOGY, INC. 发明人 EGGLESTON DAVID;RADKE BILL
分类号 G11C29/00 主分类号 G11C29/00
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