发明名称 |
Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same |
摘要 |
A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VB2 layer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.
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申请公布号 |
US7875978(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20090485473 |
申请日期 |
2009.06.16 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG DONG HA;YEOM SEUNG JIN;KIM BAEK MANN;OH JOON SEOK;LEE NAM YEAL |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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