SOLID-STATE IMAGE SENSOR, SOLID-STATE IMAGING DEVICE, AND IMAGING SYSTEM

摘要

PROBLEM TO BE SOLVED: To strike a balance between the ease of charge transfer and the securement of a dynamic range in a solid-state image sensor. SOLUTION: The solid-state image sensor includes a photodiode in a pixel. The photodiode is so formed as to comprise a first impurity region of second conductivity type which is formed on the semiconductor substrate of first conductivity type, and a second impurity region of first conductivity type. The first impurity region has a plurality of impurity concentration peaks. At least a first impurity concentration peak C1 close to the second impurity region is in a range of 3×1015≤C1≤2×1017cm-3. COPYRIGHT: (C)2011,JPO&INPIT