| 发明名称 |
GROUP 3B NITRIDE CRYSTAL DOPED WITH Zn, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a Zn-doped group 3B nitride crystal having high resistance and low dislocation density. SOLUTION: The Zn-doped group 3B nitride crystal has specific resistance of not less than 1×10<SP>2</SP>Ωcm, Zn concentration of from 1.0×10<SP>18</SP>to 2×10<SP>19</SP>atoms/cm<SP>3</SP>in the group 3B nitride crystal, and etch pit density of not more than 5×10<SP>6</SP>/cm<SP>2</SP>. The crystal can be obtained by a liquid phase method (Na flux method). COPYRIGHT: (C)2011,JPO&INPIT
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| 申请公布号 |
JP2011020896(A) |
申请公布日期 |
2011.02.03 |
| 申请号 |
JP20090167901 |
申请日期 |
2009.07.16 |
| 申请人 |
NGK INSULATORS LTD;TOYODA GOSEI CO LTD;MORI YUSUKE |
发明人 |
IWAI MAKOTO;HIGASHIHARA SHUHEI;IMAI KATSUHIRO;MORI YUSUKE;KITAOKA YASUO;NAGAI SEIJI;SATO SHINYUKI |
| 分类号 |
C30B29/38;C30B19/02;H01L21/20;H01L21/208 |
主分类号 |
C30B29/38 |
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