| 摘要 |
<p>A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.</p> |
