| 发明名称 |
IMPROVED DEPOSITION SHIELD IN PLASMA PROCESSING SYSTEM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an improved deposition shield for a plasma processing system. <P>SOLUTION: The deposition shield 14 improved for surrounding a processing space 12 of the plasma processing system includes a cylindrical body having: an inner surface 82; an outer surface 84; an upper end face 86; and a lower end face 88. The lower end face 88 has an end lip surface 120. Protection barriers 150 are combined with a plurality of exposed surfaces 145 of the deposition shield 14. The exposed surfaces 145 include the inner surface 82, the upper end face 86, and the end lip surface 120. <P>COPYRIGHT: (C)2011,JPO&INPIT |
| 申请公布号 |
JP2011049173(A) |
申请公布日期 |
2011.03.10 |
| 申请号 |
JP20100224101 |
申请日期 |
2010.10.01 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
SAEGUSA HIDEHITO;TAKASE HITOSHI;MIHASHI YASUSHI;NAKAYAMA HIROYUKI |
| 分类号 |
H05H1/46;C23C16/44;H01J37/32;H01L21/205;H01L21/306;H01L21/3065;H01L21/31;H05H1/00 |
主分类号 |
H05H1/46 |
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| 主权项 |
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