| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a polycrystalline silicon ingot capable of effectively utilizing a crucible residue which has become a waste material conventionally and obtaining properties equivalent to the case where a raw material of high purity is used. <P>SOLUTION: The method for manufacturing a silicon ingot is characterized by including a process for pulling up a single crystal ingot for solar cells by a Czochralski method from silicon melt containing a first dopant which specifies a first conductivity, and a process for forming an ingot using a residue in a crucible after pulling up the single crystal silicon ingot (crucible residue) as a raw material of the polycrystalline silicon ingot. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
