SURFACE TREATMENT METHOD OF AIN CRYSTAL, AIN CRYSTAL SUBSTRATE, AIN CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface treatment method of an AIN crystal for efficiently forming a surface of excellent morphology in an AlN crystal.

SOLUTION: In the surface treatment method of the AIN crystal in which the surface of AIN crystal 1 is chemically and mechanically polished, abrasive grains of slurry 17 that are used in chemical and mechanical polishing includes: high-hardness abrasive grains having hardness higher than that of the AIN crystal 1 and low-hardness abrasive grains having hardness lower than that of the AIN crystal 1. The volume ratio of the high-hardness abrasive grains with respect to the low-hardness abrasive grains in the abrasive grains 16 of the slurry 17 can range from 5:95 to 70:30.

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