| 摘要 |
PROBLEM TO BE SOLVED: To improve the reverse breakdown withstanding voltage of a semiconductor device, and to reduce the area of the semiconductor device. SOLUTION: In a reverse voltage breakdown withstanding voltage structure region 240 of a reverse blocking IGBT, a plurality of p-type field limiting rings (outer peripheral FLRs) 41 are provided. To each outer peripheral FLR 41, a field plate (outer peripheral FP) 42 is connected. The outer peripheral FP 42 includes a first outer peripheral FP part 43, coming into contact with the outer peripheral FLR 41 that is closest to an active region and a second outer peripheral FP part 44, coming into contact with the other outer peripheral FLR 41. The end at the active region side of the first outer peripheral FP part 43 is provided so as to protrude to the active region side. The end on the outer peripheral end side of the second outer peripheral FP part 44 is provided so as to protrude to the outer peripheral end side. COPYRIGHT: (C)2011,JPO&INPIT |
