| 摘要 |
A method for selecting a set of features for monitoring a lithography process using a reticle, by identifying a set of candidate features, defining control regions around the candidate features, performing substrate level analysis using the reticle with different settings for the lithography process, determining which of the candidate features are most changed by the different settings, ranking the candidate features according to how much they are changed, and selecting the test set of features from those candidate features that are most changed.
|
