发明名称 |
Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light |
摘要 |
Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.
|
申请公布号 |
US7931850(B2) |
申请公布日期 |
2011.04.26 |
申请号 |
US20100861627 |
申请日期 |
2010.08.23 |
申请人 |
COLORADO STATE UNIVERSITY RESEARCH FOUNDATION;THE REGENTS OF UNIVERSITY OF CALIFORNIA;JMAR TECHNOLOGIES, INC. |
发明人 |
MENONI CARMEN S.;ROCCA JORGE J.;VASCHENKO GEORGIY;BLOOM SCOTT;ANDERSON ERIK H.;CHAO WEILUN;HEMBERG OSCAR |
分类号 |
B29C67/00 |
主分类号 |
B29C67/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|