| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a photoelectric conversion apparatus having a superior efficiency of photoelectric conversion, capable of preventing the reduction of efficiency of photoelectric conversion caused by the surface plasmon absorption at a light incoming surface of a back electrode layer and defects of a semiconductor photoelectric conversion layer. <P>SOLUTION: A photoelectric conversion apparatus has: a transparent conductive layer that includes a translucent conductive material and that is formed on a translucent insulating substrate while having an irregular structure; at least a pair of semiconductor photoelectric conversion layers laminated so as to have pin junction on the transparent conductive layer; and a back electrode layer formed on the semiconductor photoelectric conversion layer. An i-type semiconductor layer is configured by laminating a first i-type semiconductor layer formed on the transparent conductive layer and a second i-type semiconductor layer formed on the first i-type semiconductor layer. In the first i-type semiconductor layer, a square average roughness of a surface on the second i-type semiconductor layer side is smaller than that of a surface on the transparent conductive layer side, and a square average roughness of a p-type semiconductor layer or an n-type semiconductor layer arranged on the back electrode layer side in the semiconductor photoelectric conversion layer is smaller than that of a surface of the transparent conductive layer side in the first i-type semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
