| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can prevent delay and nonuniform operation during switching, and stress generated in a trench formation region is relaxed as much as possible, and to provide a method of manufacturing the semiconductor device. SOLUTION: A gate electrode 53 in a gate trench 31 includes: a polysilicon layer 51; and a tungsten layer 52 for a gate, having lower resistance than the polysilicon layer 51. Further, a source electrode 63 includes: a tungsten layer 61 for a source packaged in a source trench 20; and an AlSi layer 62 contacting the tungsten layer 61 for the source and covering a source layer 14 and the gate electrode 53 via a thick film insulating film 17. COPYRIGHT: (C)2011,JPO&INPIT |
