| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel structure that erases signal charges in a floating gate for an MOS image sensor having a structure configured such that signal charges are injected into the floating gate and a signal corresponding to the signal charges is read out. SOLUTION: The MOS image sensor includes a photoelectric conversion portion PD formed in a semiconductor substrate 51, a pixel portion 52a having a semiconductor memory WT including the floating gate FG into which electric charges accumulated in the photoelectric conversion portion PD are injected and which is provided above the semiconductor substrate 51, and a readout portion 55 which reads out the signal corresponding to the electric charges injected into the floating gate FG. The pixel portion 52a includes a tunnel insulating film 7 provided between the semiconductor substrate 51 and floating gate FG, an impurity diffusion layer 12 provided in the semiconductor substrate 51, and a tunnel insulating film 15 formed on the impurity diffusion layer 12, the floating gate FG being provided even on the tunnel insulating film 15. COPYRIGHT: (C)2011,JPO&INPIT
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