| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with low on-resistance. SOLUTION: The semiconductor device includes: a drain region 13 of a first conductivity type; a source region having a source layer 16 of the first conductivity type, a first back gate layer 17 and a second back gate layer 18 of a second conductivity type both; a channel region 15 of the second conductivity type arranged between the drain region 13 and the source region; a first semiconductor region 14 of the first conductivity type arranged between the drain region 13 and the channel region 15; and a second semiconductor region 19 of the first conductivity type arranged between the channel region 15 and the source region. The first back gate layer 17 is adjacent to the second semiconductor region 19 on one side of a channel length direction, and is adjacent to the source layer 16 on the other side of the channel length direction. Meanwhile, the second back gate layer 18 is adjacent to the source layer 16 on one side of the channel length direction, and is adjacent to the second semiconductor region 19 on the other side of the channel length direction. COPYRIGHT: (C)2011,JPO&INPIT
|
