| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a silicon wafer that simplifies the heat treatment in a device production process, eliminates the need of providing a backside damage, and improves the gettering capability of the silicon wafer, and also to provide the silicon wafer. <P>SOLUTION: The method for producing a silicon wafer includes: a process of forming an epitaxial layer (2) on a silicon wafer (1) to which carbon is added; and a process of accelerating the formation of carbon and oxygen-containing precipitates formed in the silicon wafer (1) by heat treating the silicon wafer (1) formed thereon with the epitaxial layer (2) at 650 to 1,000°C. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
