| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus controlling the flow rate of distributing gas more precisely. SOLUTION: The vapor deposition apparatus 1 includes a susceptor 3 which holds a substrate 5 as a workpiece and can rotate, and a flow channel 10 for flowing gas for deposition on one main surface of the substrate 5. An average pore diameter of a porous body arranged on a side surface part inside the flow channel 10 is larger than an average pore diameter of a porous body arranged in a center part of the flow channel 10. The average pore diameter of the porous body arranged on the side surface part is preferably 50% larger than the average pore diameter of the porous body arranged on the center part. COPYRIGHT: (C)2011,JPO&INPIT
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