NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LIGHT EMITTING DEVICE

摘要

Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device 11 includes a support base 13 and a semiconductor laminate 15. The semiconductor laminate 15 includes an n-type GaN-based semiconductor region 17, an active layer 19, and a p-type GaN-based semiconductor region 21. The n-type GaN-based semiconductor region 17, the active layer 19, and the p-type GaN-based semiconductor region 21 are mounted on a principal surface 13a, and are arranged in the direction of a predetermined axis Ax orthogonal to the principal surface 13a. A rear surface 13b of the support base 13 is inclined with respect to a plane orthogonal to a reference axis extending in the c-axis direction of a hexagonal gallium nitride semiconductor of the support base 13. A vector VC represents the c-axis direction. A surface morphology M of the rear surface 13b has a plurality of protrusions 23 protruding in the direction of a <000-1>-axis. The direction of the predetermined axis Ax is different from the direction of the reference axis (the direction of the vector VC).