| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that can supply precise programming voltages when programming, regardless of the programming conditions or factors of variations. <P>SOLUTION: The nonvolatile semiconductor memory device has a first switch to select a source line connected to the source terminal of a memory cell to supply rewriting voltages, a voltage detector line to detect a rewriting voltage supplied to the source line, and a second switch to connect the source line selected by the first switch to the voltage detector line. It can detect the rewriting voltage supplied to the source line without considering the voltage drop effects caused by the rewriting current running through the first switch when rewriting. The detected voltage is a voltage to be applied to the source terminal of the memory cell, and the rewriting voltage applied to the memory cell can be detected with high accuracy when rewriting. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
