发明名称 Current perpendicular to plane magnetoresistive sensor with reduced read gap
摘要 A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but recessed from the air bearing surface. An electrically conductive, magnetic lead is formed over the pinned layer and AFM layer such that the lead fills a space between the AFM layer and the air bearing surface. In this way, the read gap is distance between the outermost portion of the pinned layer structure and free layer. The thickness of the AFM layer and capping layer are not included in the read gap.
申请公布号 US7961440(B2) 申请公布日期 2011.06.14
申请号 US20070863131 申请日期 2007.09.27
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 GILL HARDAYAL SINGH;JAYASEKARA WIPUL PEMSIRI
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项
地址