发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The method includes: forming a first capping layer on a metal catalyst layer; forming and patterning a second capping layer on the first capping layer; forming an amorphous silicon layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. The crystallization catalyst diffuses at a uniform low concentration to control a position of a seed formed of the catalyst such that a channel region in the polysilicon layer is close to a single crystal. Therefore, the characteristics of the thin film transistor device may be improved and uniformed.
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申请公布号 |
US7989326(B2) |
申请公布日期 |
2011.08.02 |
申请号 |
US20060460654 |
申请日期 |
2006.07.28 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
SEO JIN-WOOK;LEE KI-YONG;YANG TAE-HOON;PARK BYOUNG-KEON |
分类号 |
H01L21/84;H01L21/00;H01L21/20;H01L21/336;H01L27/01;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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