发明名称 Semiconductor laser
摘要 A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region. The reflective region has a plurality of reflection peak wavelengths that periodically vary at a predetermined wavelength interval. The first facet and the reflective region constitute a laser cavity. Furthermore, the gain region includes an active layer where light is generated, a diffraction grating layer having a diffraction grating whose grating pitch varies in a light propagation direction, a refractive-index control layer provided between the active layer and the diffraction grating layer, a first electrode for injecting current into the active layer, and a plurality of second electrodes arranged in the light propagation direction to inject current into the refractive-index control layer.
申请公布号 US7995635(B2) 申请公布日期 2011.08.09
申请号 US20100726659 申请日期 2010.03.18
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 FUKUDA CHIE
分类号 H01S3/10;H01S3/08;H01S5/00 主分类号 H01S3/10
代理机构 代理人
主权项
地址