发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a nonvolatile memory system, having a means for preventing erroneous reading of the nonvolatile semiconductor memory device using a multi-value recording system. <P>SOLUTION: In the nonvolatile semiconductor memory device using a multi-value recording system and the nonvolatile memory system, a first verify voltage is used when data are written before a packaging process, and a second verify voltage lower than the first verify voltage is selected when the data are written after the packaging process. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011159351(A) 申请公布日期 2011.08.18
申请号 JP20100019693 申请日期 2010.01.29
申请人 TOSHIBA CORP 发明人 HARADA YOSHIKAZU;FUJITA NORIHIRO;FUJIO MASAKI
分类号 G11C16/02;G11C16/04 主分类号 G11C16/02
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