| 摘要 |
PROBLEM TO BE SOLVED: To prevent an embedding defect such as a void occurring in an element isolation film where an insulating film is embedded in an element isolation groove. SOLUTION: An element forming region 10a divided by the element isolation film 8 includes a first band 141, a second band 142 and a plurality of element forming units 1a. One of the plurality of element forming units 1a includes a plurality of first connection forming units 10b where an end of a first band-side and the first band are connected, a plurality of first isolation forming units 10d where the end of the first band-side and the first band are isolated and arranged, a plurality of second connection forming units 10c where an end of a second band-side and the second band are connected and a plurality of second isolation forming units 10e where the end of the second band-side and the second band are isolated and installed. The first isolation forming unit 10d is disposed between the adjacent first connection forming units 10b, and the second isolation forming unit 10e is disposed between the adjacent second connection forming units 10c in a semiconductor device. COPYRIGHT: (C)2011,JPO&INPIT |
