| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor free-standing substrate whose warpage is reduced, and a light emitter using the same. <P>SOLUTION: The nitride semiconductor free-standing substrate is the one composed of continuously grown nitride semiconductor crystals, wherein the inside of the nitride semiconductor free-standing substrate is provided with inversion domains at density of 10 to 600 pieces/cm<SP>2</SP>in the cross-section parallel to the surface of the substrate, the surface of the substrate has inversion domains at density of 0 to 200 pieces/cm<SP>2</SP>, and the density of the inversion domains arriving at the surface of the substrate is lower than that of the inversion domains at the inside of the nitride semiconductor free-standing substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
