| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor crystal having a structure that allows a plurality of nitride semiconductor self-support substrates to be acquired without inducing cracks. <P>SOLUTION: A nitride semiconductor crystal 10 is produced, in which a nitride semiconductor layer of the same species is deposited to a thickness of 2 mm or more and the deposited nitride semiconductor layer of the same species comprises a nitride semiconductor layer 1 having low impurity concentration and a nitride semiconductor layer 2 having high impurity concentration, alternately layered in two or more cycles. Then the nitride semiconductor crystal 10 having the above layers is sliced at the nitride semiconductor layer 1 of low impurity concentration as a cutting position to obtain a nitride semiconductor self-support substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT |
