发明名称 |
METHOD FOR MANUFACTURING EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR, AND ASSEMBLY OF EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an extra-thin wire of a compound semiconductor with high precision, which is suitable for mass production, and to provide an assembly of the extra-thin wire of the compound semiconductor. SOLUTION: The manufacturing method includes: filling a fine through-hole of a template having a plurality of fine through-holes with a nanosize with the compound semiconductor by using an electrodeposition method; or filling the fine through-hole alternately with a first element and a second element which are constituent elements of the compound semiconductor into a layer state, and then diffusion-heat-treating the first element and the second element. COPYRIGHT: (C)2011,JPO&INPIT
|
申请公布号 |
JP2011162844(A) |
申请公布日期 |
2011.08.25 |
申请号 |
JP20100026986 |
申请日期 |
2010.02.09 |
申请人 |
NAGASAKI UNIV |
发明人 |
OKAI TAKESHI;TAKAO KEIZO;KAGAWA AKIO |
分类号 |
C25D7/00;B82B1/00;B82B3/00;C01B19/04;C25D1/00;C25D5/10;C25D5/50 |
主分类号 |
C25D7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|