发明名称 METHOD FOR MANUFACTURING EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR, AND ASSEMBLY OF EXTRA-THIN WIRE OF COMPOUND SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an extra-thin wire of a compound semiconductor with high precision, which is suitable for mass production, and to provide an assembly of the extra-thin wire of the compound semiconductor. SOLUTION: The manufacturing method includes: filling a fine through-hole of a template having a plurality of fine through-holes with a nanosize with the compound semiconductor by using an electrodeposition method; or filling the fine through-hole alternately with a first element and a second element which are constituent elements of the compound semiconductor into a layer state, and then diffusion-heat-treating the first element and the second element. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011162844(A) 申请公布日期 2011.08.25
申请号 JP20100026986 申请日期 2010.02.09
申请人 NAGASAKI UNIV 发明人 OKAI TAKESHI;TAKAO KEIZO;KAGAWA AKIO
分类号 C25D7/00;B82B1/00;B82B3/00;C01B19/04;C25D1/00;C25D5/10;C25D5/50 主分类号 C25D7/00
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