| 摘要 |
The present invention provides a semiconductor storage circuit that may suppress a data read characteristic from being deteriorated due to influence of characteristic change of a sense amplifier, in a multi-bit-type memory cell. The semiconductor storage circuit includes a memory cell array that has plural multi-bit-type memory cells, two multiplexers, and two sense amplifiers. The first multiplexer connects a main bit line connected to an R-side electrode of the even-numbered memory cell in a row direction to the first sense amplifier, and connects a main bit line connected to an L-side electrode of the odd-numbered memory cell to the second sense amplifier. The second multiplexer connects a main bit line connected to an L-side electrode of the even-numbered memory cell to the first sense amplifier, and connects a main bit line connected to an R-side electrode of the odd-numbered memory cell to the second sense amplifier.
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