| 摘要 |
A present nitride-based semiconductor light emitting device includes: a pattern surface formed on a conductive substrate; a multilayered metal layer formed on the pattern surface; and a multilayered semiconductor layer formed on the multilayered metal layer, and characterized in that main surfaces of the multilayered metal layer and the multilayered semiconductor layer have smaller area than the pattern surface has, and the multilayered semiconductor layer includes a p type nitride-based semiconductor layer, a light emitting layer and an n type nitride-based semiconductor layer. Thus, a highly reliable nitride-based semiconductor light emitting device with excellent adhesion between a nitride-based semiconductor layer and a conductive substrate, and a manufacturing method thereof are provided. |
