| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element, capable of improving the electrical characteristics of an optical semiconductor layer and an electrode, and to provide a method of manufacturing such a light emitting element. <P>SOLUTION: The light emitting element 20 has an optical semiconductor layer 2 comprising a nitride semiconductor wherein a first semiconductor layer 2a, a light-emitting layer 2b, and a second semiconductor layer 2c are sequentially stacked, a first electrode layer 3 electrically connected to the first semiconductor layer, and a second electrode layer 7 arranged on and electrically connected to the second semiconductor layer. The second electrode layer 7 has a conductive reflecting layer 4 made of silver and a conductive layer 5 that is positioned on the conductive reflecting layer and has a plurality of through-holes running through the layer in the thickness direction. The conductive reflecting layer is oxidized in the vicinity of an interface region to the second semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
