| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce resistance between drain and source contacts of a group III nitride transistor and lower drain and source regions. <P>SOLUTION: A method for manufacturing a group III Nitride transistor includes processes of: etching trenches in a field dielectric 240 extending over gate, source, and drain regions; forming a gate dielectric 270 over the gate, source and drain regions; forming a blanket diffusion barrier 272 over the gate dielectric layer 270; removing the blanket diffusion barrier 272 from the source and drain regions; and removing the gate dielectric 270 from the source and drain regions to substantially expose the source and drain regions. Then, ohmic contacts are formed by depositing contact metal 290 in the source and drain regions. <P>COPYRIGHT: (C)2011,JPO&INPIT |
