METHOD OF POLISHING SUBSTRATE CONTAINING POLYSILICON AND AT LEAST ONE OF SILICON OXIDE AND SILICON NITRIDE

摘要

PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing composition that improves a polishing selection ratio of a silicon oxide or a silicon nitride with respect to polysilicon, and a polishing method using the same.SOLUTION: A substrate contains polysilicon and at least one of a silicon oxide and a silicon nitride. The substrate is polished by using a chemical mechanical polishing composition and a polishing pad. The chemical mechanical polishing composition contains, as initial components, water, an abrasive, and an alkyl aryl polyether sulfonate compound including a hydrophobic portion with an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms.