发明名称 METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric film including an adhesion film and having an aligned orientation.SOLUTION: An insulating film 12 of a silicon oxide and a Ti layer 14 are deposited at an upper portion on an Si substrate 11, and a Pt layer 16 is deposited on the Ti layer 14 (a). The substrate 11 on which the Ti layer 14 and the Pt layer 16 are deposited is carried in a plasma vapor deposition device (b). In the inside of the plasma vapor deposition device, the substrate 11 is heated to a piezoelectric film deposition temperature in an inert gas atmosphere (c). In the inside of the plasma vapor deposition device, an oxide piezoelectric film 18 is deposited onto the heated substrate 11 by plasma vapor deposition (d). Further, an upper electrode 20, such as Pt, is formed on the piezoelectric film 18.
申请公布号 JP2011204776(A) 申请公布日期 2011.10.13
申请号 JP20100068486 申请日期 2010.03.24
申请人 STANLEY ELECTRIC CO LTD 发明人 NAKAMURA SUSUMU
分类号 H01L41/18;B81C1/00;C23C14/06;C23C14/08;H01L41/09;H01L41/22;H01L41/29;H01L41/316;H01L41/39 主分类号 H01L41/18
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