| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the reliability of data can be maintained even if miniaturization is progressed.SOLUTION: A memory cell MTr has a gate insulation film 13 formed on a semiconductor substrate 11, a gate electrode 14 formed on the gate insulation film 13, and a variable resistance film 15 formed on the gate electrode 14. A plurality of memory strings connecting the memory cell MTr in series are arranged in the longitudinal direction being a column direction. Word lines are WL-arranged in the longitudinal direction being a row direction. A plate line 33 is arranged so as to hold a variable resistance film 15 between them together with the gate electrode 14. |
