| 摘要 |
PROBLEM TO BE SOLVED: To suppress coloring of locus-shaped noise when a moving high-luminance subject is imaged.SOLUTION: In a unit pixel of a CMOS image sensor, a thermal oxidation film 160 is formed on an upper surface of a semiconductor substrate. Gate electrodes 122A, 124A and 129A are formed on the thermal oxidation film 160. An insulating film 161 is then formed on an upper surface of the gate electrodes 122A, 124A and 129A and the thermal oxidation film 160 and further on an upper surface of the insulating film, a light shielding film (tungstic acid film) 162 and a flattening film 163 are layered and formed. A thickness between the semiconductor substrate and the light shielding film 162 is formed thinner as light incident to a photoelectric conversion region has a longer wavelength in a wavelength region. The present invention may be applicable to e.g., a solid-state image sensor. |
