| 摘要 |
PROBLEM TO BE SOLVED: To achieve a field-effect transistor suppressing an increase in ON-state resistance generated in continuous operation.SOLUTION: The field-effect transistor is constituted of a nitride semiconductor and meets a relation τ/τ> exp{-46.5+45.7exp(logx/21.6)+0.2exp(logx/0.27)}, wherein x is R/R-1, Ris an ON-state resistance immediately after switching to an ON-state after a predetermined time is maintained in an OFF-state, Ris an ON-state resistance immediately after switching from an OFF-state to the ON-state when an OFF-state maintained time is within the predetermined time, τis a trap time constant in which a collapse causing electron is trapped, and τis a time constant of emission of the collapse causing trapped electron. |
