LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To increase a luminous efficiency in a light emitting element having a quantum well layer of an InGaN material.SOLUTION: A light emitting element includes a metal fine structure 18 standing alone as an island in the vicinity of a quantum well layer 6 formed of an InGaN material, wherein an emission wavelength of light discharged from the quantum well layer 6 is substantially equal to a surface plasmon oscillation of the metal fine structure 18.