| 摘要 |
PROBLEM TO BE SOLVED: To contribute to miniaturization of an integrated circuit by making peripheral circuits of a nonvolatile semiconductor memory small.SOLUTION: The nonvolatile semiconductor memory includes: an n-type diffusion layer 50 which is formed on a p-type substrate 10 and connects to a source line 430; a word electrode 200 which is provided on the p-type substrate 10 and connects to a word line 400; a word insulating layers provided between the p-type substrate 10 and the word electrode 200; a tunnel insulating layer provided on the n-type diffusion layer 50 and at a sidewall of the word electrode 200; an electric charge storage layer provided on the tunnel insulating layer; a control insulating layer provided on the electric charge storage layer; and a control electrode 300 which is provided on the control insulating layer and connects to a control line 420. The nonvolatile semiconductor memory further includes a control part which, when the writing is carried out to a memory element 600, applies a positive voltage to the source line 430, a negative voltage to the word line 400 and also a positive voltage to the control line 420. |
