Junction barrier schottky rectifiers and methods of making thereof

摘要

A semiconductor device is disclosed. The semiconductor device comprises a substrate layer comprising a semiconductor material of a first conductivity type and a drift layer on the substrate layer. The drift layer comprises a semiconductor material of the first conductivity type; a central region comprising a plurality of regions of epitaxial semiconductor material of a second conductivity type different than the first conductivity type on a central portion of the drift layer, where the regions of semiconductor material of the second conductivity type have upper surfaces and sidewalls; and a drift region of semiconductor material of the first conductivity type on the drift layer adjacent and between the plurality of regions of semiconductor material of the second conductivity type; an ohmic contact on the substrate layer opposite the drift layer; an ohmic contact on the plurality of regions of the central region; a metal layer on the ohmic contact on the plurality of regions of the central region; and a Schottky metal layer in contact with at least a portion of the drift region, where the Schottky metal layer is electrically connected to the metal layer on the ohmic contact on the central region.