High voltage driver for P-type metal oxide semiconductor in high voltage application, has pre-driver with level shifter and controlling gates of transistors of output stage, and reference voltage generator connected to pre-driver

摘要

The driver has a set of thin gate oxide metal oxide semiconductor (MOS) transistors without expanded drain options and low drain breakdown voltage, and another set of thin gate oxide MOS transistors with extended drain option of double-diffused MOS and laterally diffused MOS type, where the former transistors are standard type and the latter transistors are extended-drain type. A reference current generator is linked to an output stage, where a pre-driver with level shifter controls gates of the transistors of the output stage. A reference voltage generator (VREFP) is linked to the pre-driver.