发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING REPASSIVATION LAYER WITH REDUCED OPENING TO CONTACT PAD OF SEMICONDUCTOR DIE |
摘要 |
Abstract SEMICONDUCTOR DEVICE AND METHOD OF FORMING REPASSIVATION LAYER WITH REDUCED OPENING TO CONTACT PAD OF SEMICONDUCTOR DIEA semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive Layer.(Fig 3n) |
申请公布号 |
SG174668(A1) |
申请公布日期 |
2011.10.28 |
申请号 |
SG20110005394 |
申请日期 |
2011.01.25 |
申请人 |
STATS CHIPPAC LTD |
发明人 |
LIN, YAOJIAN;CHEN, KANG;FANG, JIANMIN;FENG, XIA |
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