| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new method for producing a silicon carbide epitaxial film, for producing an epitaxial film of high quality. <P>SOLUTION: There is provided a method for producing the silicon carbide epitaxial film in which a silicon carbide epitaxial film is deposited on a silicon carbide single crystal substrate by a chemical vapor deposition method. The method is characterized in that, while one of a pressure condition or a substrate temperature condition is fixed, the other one of conditions is switched between a high set condition and a low set condition in the middle of the film deposition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
