| 发明名称 |
FILM FORMING METHOD OF OXIDE SEMICONDUCTOR |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an oxide semiconductor whose transistor characteristic is remarkably improved. <P>SOLUTION: A sputtering target is DC-sputtered at water partial pressure of 3×10<SP POS="POST">-4</SP>to 5×10<SP POS="POST">-2</SP>Pa in a system so as to form a formation body, and the formation body is crystallized in the film formation method of the oxide semiconductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2011222557(A) |
申请公布日期 |
2011.11.04 |
| 申请号 |
JP20100086351 |
申请日期 |
2010.04.02 |
| 申请人 |
IDEMITSU KOSAN CO LTD |
发明人 |
TOMAI SHIGEKAZU;INOUE KAZUYOSHI;YANO KIMINORI;EBATA KAZUAKI;IIZUKA TAKASHI |
| 分类号 |
H01L21/363;C23C14/34;H01L21/336;H01L29/786 |
主分类号 |
H01L21/363 |
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