| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability, along with a manufacturing method thereof, in which the crystallinity of a ferroelectric material or a high dielectric material constituting a dielectric film of a capacitor is good, and the switching charge amount of the capacitor is high enough to allow low voltage operation. <P>SOLUTION: After transistors T1 and T2 are formed on a semiconductor substrate 110, a stopper layer 120 and an interlayer dielectric film 121 are formed. Then, a contact hole is formed at the interlayer dielectric film 121, and a copper film is formed on the interlayer dielectric film 121, with the contact hole filled with copper. After that, the copper film on the interlayer dielectric film 121 is removed by low-voltage CMP polishing or ECMP polishing, and the surface is flattened to form plugs 124a and 124b. Then, a barrier metal 125, a lower electrode 126a, a ferroelectric film 127, and an upper electrode 128a are formed. Thus, a semiconductor device (FeRAM) containing a ferroelectric capacitor 130 is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
