| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory in which setting operation and resetting operation can be ensured in bipolar driving, and to provide a manufacturing method of the same. <P>SOLUTION: The nonvolatile memory comprises: a word line WL as a first electrode; a bit line BL as a second electrode; a resistance change portion 25 which is provided between the word line WL and the bit line BL and transits between a first resistance state and a second resistance state; and a selection element 22 which is provided between the resistance change portion 25 and the word line WL, comprises a p layer 22p including a p-type semiconductor, an i-layer 22i including an intrinsic semiconductor, and an n layer 22n including n-type semiconductor, and comprises an impurity 220 which has smaller band gap energy than that of the intrinsic semiconductor and in which the concentration peak of the i layer 22i is at the center of the layer thickness of the i layer 22i. <P>COPYRIGHT: (C)2012,JPO&INPIT |
