METHOD OF OPERATING A SEMICONDUCTOR MEMORY APPARATUS

摘要

PURPOSE: A method of operating a semiconductor memory apparatus is provided to minimize the interference such as the threshold voltage rising of memory cells in a target page by the programming of a next page adjacent to a target page. CONSTITUTION: In a method of operating a semiconductor memory apparatus, an LSB program operation is performed(S301). An MSB program operation of a word line corresponding to a previous page is performed. The LSB program operation of a second word line corresponding to a next page is performed(S303). It is confirmed whether the LSB data of memory cells connected to the first word line is changed(S305). An MSB program operation is performed(S307). The threshold voltage of a part of memory cells is increased to a second threshold voltage level. The threshold voltage of rest memory cells is raised to the third threshold voltage level. A memory cell in which MSB data is changed is detected(S309). The MSB program operation is performed(S315).